View AUIRGP35B60PD_7890891.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

warp2 series igbt with ultrafast soft recovery diode AUIRGP35B60PD 05/10/11 features ? npt technology, positive temperature coefficient ? lower v ce (sat) ? lower parasitic capacitances ? minimal tail current ? hexfred ultra fast soft-recovery co-pack diode ? tighter distribution of parameters ? higher reliability ? lead-free, rohs compliant ? automotive qualified* benefits ? parallel operation for higher current applications ? lower conduction losses and switching losses ? higher switching frequency up to 150khz e g n-channel c v ces = 600v v ce(on) typ. = 1.85v @ v ge = 15v i c = 22a equivalent mosfet parameters r ce(on) typ. = 84m i d (fet equivalent) = 35a applications ? pfc and zvs smps circuits ? dc/dc converter charger automotive grade * qualification standards can be found at http://www.irf.com/ www.irf.com 1 to-247ac AUIRGP35B60PD gc e gate collector emitter g c e absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 60 i c @ t c = 100c continuous collector current 34 i cm pulse collector current (ref. fig. c.t.4) 120 i lm clamped inductive load current 120 a i f @ t c = 25c diode continous forward current 40 i f @ t c = 100c diode continous forward current 15 i frm maximum repetitive forward current 60 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 308 w p d @ t c = 100c maximum power dissipation 123 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.41 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 1.7 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 weight ??? 6.0 (0.21) ??? g (oz)
AUIRGP35B60PD 2 www.irf.com notes: r ce(on) typ. = equivalent on-resistance = v ce(on) typ./ i c , where v ce(on) typ.= 1.85v and i c =22a. i d (fet equivalent) is the equivalent mosfet i d rating @ 25c for applications up to 150khz. these are provided for comparison purposes (only) with equivalent mosfet sol utions. v cc = 80% (v ces ), v ge = 20v, l = 28 h, r g = 22 . pulse width limited by max. junction temperature. energy losses include "tail" and diode reverse recovery, data generated with use of diode 30eth06. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces . electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500 a v (br)ces / t j temperature coeff. of breakdown voltage ?0.78?v/c v ge = 0v, i c = 1ma (25c-125c) r g internal gate resistance ? 1.7 ? 1mhz, open collector ?1.852.15 i c = 22a, v ge = 15v 4, 5,6,8,9 v ce(on) collector-to-emitter saturation voltage ? 2.25 2.55 v i c = 35a, v ge = 15v ?2.372.80 i c = 22a, v ge = 15v, t j = 125c ?3.003.45 i c = 35a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 3.0 4.0 5.0 v i c = 250 a 7,8,9 v ge(th) / tj threshold voltage temp. coefficient ? -10 ? mv/c v ce = v ge , i c = 1.0ma gfe forward transconductance ? 36 ? s v ce = 50v, i c = 22a, pw = 80 s i ces collector-to-emitter leakage current ? 3.0 375 a v ge = 0v, v ce = 600v ?0.35?ma v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage drop ? 1.30 1.70 v i f = 15a, v ge = 0v 10 ?1.201.60 i f = 15a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig qg total gate charge (turn-on) ? 160 240 i c = 22a 17 q gc gate-to-collector charge (turn-on) ? 55 83 nc v cc = 400v ct1 q ge gate-to-emitter charge (turn-on) ? 21 32 v ge = 15v e on turn-on switching loss ? 220 270 i c = 22a, v cc = 390v ct3 e off turn-off switching loss ? 215 265 j v ge = +15v, r g = 3.3 h e total total switching loss ? 435 535 t j = 25c t d(on) turn-on delay time ? 26 34 i c = 22a, v cc = 390v ct3 t r rise time ? 6.0 8.0 ns v ge = +15v, r g = 3.3 h t d(off) turn-off delay time ? 110 122 t j = 25c t f fall time ? 8.0 10 e on turn-on switching loss ? 410 465 i c = 22a, v cc = 390v ct3 e off turn-off switching loss ? 330 405 j v ge = +15v, r g = 3.3 h 11,13 e total total switching loss ? 740 870 t j = 125c wf1,wf2 t d(on) turn-on delay time ? 26 34 i c = 22a, v cc = 390v ct3 t r rise time ? 8.0 11 ns v ge = +15v, r g = 3.3 h 12,14 t d(off) turn-off delay time ? 130 150 t j = 125c wf1,wf2 t f fall time ? 12 16 c ies input capacitance ? 3715 ? v ge = 0v 16 c oes output capacitance ? 265 ? v cc = 30v c res reverse transfer capacitance ? 47 ? pf f = 1mhz c oes eff. effective output capacitance (time related) ?135? v ge = 0v, v ce = 0v to 480v 15 c oes eff. (er) effective output capacitance (energy related) ?179? t j = 150c, i c = 120a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 / / s q rr diode reverse recovery charge ? 80 180 nc t j = 25c i f = 15a, v r = 200v, 21 ? 220 600 t j = 125c di/dt = 200a/ s i rr peak reverse recovery current ? 4.0 6.0 a t j = 25c i f = 15a, v r = 200v, 19,20,21,22 ?6.510 t j = 125c di/dt = 200a/ s ct5 conditions
AUIRGP35B60PD www.irf.com 3

!"#"$ $
qualification information ? to-247 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (425v) aec-q101-002 human body model class h2 (4000v) aec-q101-001
AUIRGP35B60PD 4 www.irf.com fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 125c; tp = 80 s 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 012345 v ce (v) 0 10 20 30 40 50 60 70 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345 v ce (v) 0 10 20 30 40 50 60 70 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345 v ce (v) 0 10 20 30 40 50 60 70 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w )
AUIRGP35B60PD www.irf.com 5 fig. 8 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = 125c fig. 12 - typ. switching time vs. i c t j = 125c; l = 200 h; v ce = 390v, r g = 3.3 ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 11 - typ. energy loss vs. i c t j = 125c; l = 200 h; v ce = 390v, r g = 3.3 ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 10 - typ. diode forward characteristics tp = 80 s fig. 7 - typ. transfer characteristics v ce = 50v; tp = 10 s 0 5 10 15 20 v ge (v) 0 100 200 300 400 500 600 700 800 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 11a i ce = 22a i ce = 35a 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 11a i ce = 22a i ce = 35a 0 5 10 15 20 25 30 35 40 i c (a) 0 100 200 300 400 500 600 700 800 e n e r g y ( j ) e off e on 0 10 20 30 40 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f i nst ant aneous f or w ard c urrent - i (a ) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
AUIRGP35B60PD 6 www.irf.com fig. 14 - typ. switching time vs. r g t j = 125c; l = 200 h; v ce = 390v, i ce = 22a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 13 - typ. energy loss vs. r g t j = 125c; l = 200 h; v ce = 390v, i ce = 22a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 15 - typ. output capacitance stored energy vs. v ce fig. 17 - typical gate charge vs. v ge i ce = 22a fig. 18 - normalized typ. v ce(on) vs. junction temperature i c = 22a, v ge = 15v -50 0 50 100 150 200 t j (c) 0.8 1.0 1.2 1.4 n o r m a l i z e d v c e ( o n ) ( v ) 0 10 20 30 40 50 r g ( ) 0 100 200 300 400 500 600 700 800 e n e r g y ( j ) e on e off 0 10 20 30 40 50 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 400v 0 100 200 300 400 500 600 700 v ce (v) 0 5 10 15 20 25 30 e o e s ( j )
AUIRGP35B60PD www.irf.com 7 !%&

'& '
!%&
'
'&' !%&
( )' !%&
' * 20 40 60 80 100 100 1000 f di /dt - (a/ s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 800 100 1000 f di /dt - (a/ s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j
AUIRGP35B60PD 8 www.irf.com fig. 24. maximum transient thermal impedance, junction-to-case (diode) fig 23. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.363 0.000112 0.864 0.001184 0.473 0.032264 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.139 0.000257 0.077 0.001418 0.194 0.020178 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
AUIRGP35B60PD www.irf.com 9 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg 80 v dut 480v 1k vcc dut 0 l fig.c.t.4 - resistive load circuit rg vcc dut r = v cc i cm fig.c.t.3 - switching loss circuit fig. c.t.5 - reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 g d s dif/dt adjust pfc diode l rg vcc dut / driver
AUIRGP35B60PD 10 www.irf.com fig. wf1 - typ. turn-off loss waveform @ t j = 25c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 25c using fig. ct.3 fig. wf3 - reverse recovery waveform and definitions

t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f ! "

# $$
$ %" $ & &
$ &# $$
'
(
$$ )*
)) +
(
# -50 0 50 100 150 200 250 300 350 400 450 9.00 9.20 9.40 9.60 time ( s) v ce (v) -5 0 5 10 15 20 25 30 35 40 45 i ce (a) test current 90% test current 5% v ce 10% test current eon loss tr -50 0 50 100 150 200 250 300 350 400 450 -0.20 0.00 0.20 0.40 0.60 0.80 time( s) v ce (v) -5 0 5 10 15 20 25 30 35 40 45 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf
AUIRGP35B60PD www.irf.com 11

to-247ac part marking information

+ ,-, ..-././ -'*01 23 0) 0
AUIRGP35B60PD 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRGP35B60PD to-247 tube 25 AUIRGP35B60PD
AUIRGP35B60PD www.irf.com 13 important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

▲Up To Search▲

Price & Availability of AUIRGP35B60PD

	To Download AUIRGP35B60PD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .